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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE4343/D High-Voltage Transistors High Power MJE4343 MJE4353 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS NPN PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. * High Collector-Emitter Sustaining Voltage -- NPN PNP VCEO(sus) = 160 Vdc -- MJE4343 MJE4353 * High DC Current Gain -- @ IC = 8.0 Adc hFE = 35 (Typ) * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc PD, POWER DISSIPATION (WATTS) II II IIIIIIIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB Max 160 160 7.0 16 20 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak (1) Base Current -- Continuous 5.0 Total Power Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range PD 125 Watts TJ, Tstg - 65 to + 150 CASE 340D-02 TO-218 TYPE _C THERMAL CHARACTERISTICS Characteristic Symbol RJC Max 1.0 Unit Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width v 5.0 s, Duty Cycle w 10%. 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 25 _C/W 75 150 50 100 125 TA, AMBIENT TEMPERATURE (C) Figure 1. Power Derating Reference: Ambient Temperature (c) Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 MJE4343 MJE4353 - 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 -4 V D1 t, TIME ( s) II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, IB = 0) VCEO(sus) ICEO ICEX Vdc 160 -- -- -- -- -- -- Adc 750 1.0 5.0 Collector-Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) Collector-Base Cutoff Current (VCB = Rated VCB, IE = 0) Emitter-Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) mAdc ICBO IEBO 750 1.0 Adc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 4.0 Vdc) hFE -- 15 8.0 -- -- -- -- 35 (Typ) 15 (Typ) 2.0 3.5 3.9 3.9 Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 800 mA) (IC = 16 Adc, IB = 2.0 Adc) Base-Emitter Saturation Voltage (IC = 16 Adc, IB = 2.0 Adc) Base-Emitter On Voltage (IC = 16 Adc, VCE = 4.0 Vdc) VCE(sat) Vdc VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT 1.0 -- -- MHz pF Cob 800 (1) Pulse Test: Pulse Width (2) fT = hfe* ftest. v 300 s, Duty Cycle w 2.0%. VCC + 30 V RC RB 3.0 2.0 SCOPE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.2 0.3 25 s +11 V 0 TJ = 25C IC/IB = 10 VCE = 30 V tr RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA Note: Reverse polarities to test PNP devices. td @ VBE(off) = 5.0 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 2. Switching Times Test Circuit Figure 3. Typical Turn-On Time 2 Motorola Bipolar Power Transistor Device Data MJE4343 MJE4353 TYPICAL CHARACTERISTICS 5.0 TJ = 25C IC/IB = 10 IB1 = IB2 VCE = 30 V 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) 3.0 t, TIME ( s) 2.0 ts 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0.8 1.0 0.7 0.5 0.2 tf 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 4. Turn-Off Time Figure 5. On Voltages DC CURRENT GAIN 1000 1000 hFE, DC CURRENT GAIN 100 50 VCE = 2 V TJ = 150C 25C - 55C 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 20 hFE, DC CURRENT GAIN 100 VCE = 2 V VCE = 2 V TJJ= 150C T = 150C 25C 25C - 55C - 55C 10 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 20 20 10 Figure 6. MJE4340 Series (NPN) Figure 7. MJE4350 Series (PNP) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 4.0 A 1.2 8.0 A 16 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 Figure 8. Collector Saturation Region Motorola Bipolar Power Transistor Device Data 3 MJE4343 MJE4353 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.02 SINGLE PULSE JC(t) = r(t) JC JC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 Figure 9. Thermal Response 100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 3.0 SECONDARY BREAKDOWN LIMITED THERMAL LIMIT TC = 25C BONDING WIRE LIMITED 50 70 100 150 200 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 9. Figure 10. Maximum Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 20 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics. 16 TJ = 100C VBE(off) 5 V 12 8.0 4.0 20 40 60 80 100 120 140 160 180 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Maximum Reverse Bias Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data MJE4343 MJE4353 PACKAGE DIMENSIONS C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 340D-02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 MJE4343 MJE4353 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 6 Motorola Bipolar Power Transistor Device Data MJE4343/D |
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